CPS057 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Silicon Controlled Rectifier Sensitive Gate SCR Chip

PROCESS CPS057
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GLASS PASSIVATED MESA
57 x 57 MILS
8.7 MILS ± 0.6 MILS
24 x 14 MILS
7.9 x 7.9 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
3,374
PRINCIPAL DEVICE TYPES
CS39-4D
2N2323 thru 2N2329
CS223-4M
BACKSIDE ANODE
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R1 (19 -May 2005)