CPQ166 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – 25 Amp, 600 Volt TRIAC Chip

PROCESS CPQ166
TRIAC
25 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GLASS PASSIVATED MESA
165 x 165 MILS
9.1 MILS ± 0.4 MILS
134 x 100 MILS
28 x 28 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
373
PRINCIPAL DEVICE TYPES
CQDD-25M Series
CQ220-25M Series
CQ220-25MFP Series
w w w. c e n t r a l s e m i . c o m
R1 (29-April 2010)