CPQ165 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – TRIAC 25 Amp, 600 Volt TRIAC Chip

PROCESS CPQ165
TRIAC
25 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
Glass Passivated Mesa
165 x 165 MILS
8.6 MILS ± 0.6 MILS
134 x 83 MILS
35 x 35 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
376
PRINCIPAL DEVICE TYPES
CQDD-25M Series
CQ220-25M Series
CQ220-25MFP Series
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R0 (20 -January 2006)