CPQ110 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Triac 8.0 Amp, 600 Volt Triac Chip

Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
PROCESS CPQ110
Triac
8.0 Amp, 600 Volt Triac Chip
GLASS PASSIVATED MESA
110 MILS x 110 MILS
8.6 MILS ± 0.6 MILS
80 MILS x 35 MILS
37 MILS x 37 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
876
PRINCIPAL DEVICE TYPES
CQ220-8B Series
CQDD-8M Series
BACKSIDE MT2
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (05-MAY 2005)