CPQ090 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – TRIAC 4.0 Amp, 600 Volt TRIAC Chip

PROCESS CPQ090
TRIAC
4.0 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
Glass Passivated Mesa
90 x 90 MILS
8.6 MILS ± 0.6 MILS
61 x 48 MILS
11 x 9.8 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
1,310
PRINCIPAL DEVICE TYPES
2N6075A
CQ202-4MS
CQ223-4M
CQD-4M
BACKSIDE MT2
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R1 (19 -May 2005)