CPQ057 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – TRIAC 2.0 Amp, 600 Volt TRIAC Chip

PROCESS CPQ057
TRIAC
2.0 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
Glass Passivated Mesa
57 x 57 MILS
8.6 MILS ± 0.6 MILS
28 x 16 MILS
10 x 9 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
3,374
PRINCIPAL DEVICE TYPES
CQ92-2M
CQ223-2M
CQ89-2M
BACKSIDE MT2
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R0 (29 -March 2005)