CPD98V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Diode Silicon High Current Schottky Diode Chip

PROCESS CPD98V
Schottky Diode
Silicon High Current Schottky Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
11 x 11 MILS
7.1 MILS
5.4 x 5.4 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
141,234
PRINCIPAL DEVICE TYPES
CMUSH2-4 Series
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)