CPD98V Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Schottky Diode Silicon High Current Schottky Diode Chip

PROCESS CPD98V
Schottky Diode
Silicon High Current Schottky Diode Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
11 x 11 MILS
7.1 MILS
6.3 x 6.3 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
93,826
PRINCIPAL DEVICE TYPES
CMUSH2-4 Series
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (20- January 2006)