CPD93V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – High Current Switching Diode Chip

PROCESS CPD93V
Switching Diode
High Current Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
12.8 x 12.8 MILS
7.1 MILS
5.1 x 5.1 MILS
Al - 30,000Å
Au-As - 10,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
63,904
PRINCIPAL DEVICE TYPES
CMPD4150
BAS56
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)