CPD89V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – High Current Diode Chip

PROCESS CPD89V
Switching Diode
High Current Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
12.8 x 12.8 MILS
7.1 MILS
5.1 x 5.1 MILS
Al - 30,000Å
Au-As - 10,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
103,344
PRINCIPAL DEVICE TYPES
CMPD1001 SERIES
CMPD5001 SERIES
w w w. c e n t r a l s e m i . c o m
R1 (22-March 2010)