CPD85V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 1 Amp Schottky Barrier Rectifier Chip

PROCESS CPD85V
Schottky Rectifier
1 Amp Schottky Barrier Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
39.4 x 39.4 MILS
7.1 MILS
35 x 35 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
10,900
PRINCIPAL DEVICE TYPES
CMPSH1-4L
w w w. c e n t r a l s e m i . c o m
R1 (22-March 2010)