English
Language : 

CPD83V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Speed Switching Diode Chip
PROCESS CPD83V
Switching Diode
High Speed Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
11 x 11 MILS
7.1 MILS
3.35 x 3.35 MILS
Al - 30,000Å
Au-As - 13,000Å
GEOMETRY
BACKSIDE CATHODE R0
GROSS DIE PER 5 INCH WAFER
137,880
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2838
CMPD7000
w w w. c e n t r a l s e m i . c o m
R5 (22-March 2010)