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CPD83V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Speed Switching Diode Chip | |||
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PROCESS CPD83V
Switching Diode
High Speed Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
11 x 11 MILS
7.1 MILS
3.35 x 3.35 MILS
Al - 30,000Ã
Au-As - 13,000Ã
GEOMETRY
BACKSIDE CATHODE R0
GROSS DIE PER 5 INCH WAFER
137,880
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2838
CMPD7000
w w w. c e n t r a l s e m i . c o m
R5 (22-March 2010)
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