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CPD83V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Speed Switching Diode Chip
PROCESS CPD83V
Switching Diode
High Speed Switching Diode Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
11 x 11 MILS
7.1 MILS
3.3 x 3.3 MILS
Al - 30,000Å
Au.As - 13,000Å
GEOMETRY
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
94,130
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2838
CMPD7000
R1 (25- April 2005)