CPD83V-1N4148 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – High Speed Switching Diode Die 0.15 Amp, 100 Volt

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CPD83V-1N4148
High Speed Switching Diode Die
0.15 Amp, 100 Volt
The CPD83V-1N4148 is a silicon high speed switching diode ideal for all types of commercial,
industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Size 3.35 x 3.35 MILS
ANODE
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au-As – 9,000Å
Scribe Alley Width
2.3 MILS
Wafer Diameter
5 INCHES
BACKSIDE CATHODE
R0
Gross Die Per Wafer
137,880
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Forward Surge Current, tp=1.0μs
Operating and Storage Junction Temperature
SYMBOL
VRRM
VRWM
IO
IF
IFSM
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
IR
VR=20V
BVR
IR=1.0mA
100
BVR
IR=100μA
75
VF
IF=10mA
CJ
VR=0, f=1.0MHz
trr
VR=6.0V, IF=10mA, Irr=1.0mA, RL=100Ω
100
75
150
200
2.0
-65 to +150
MAX
25
1.0
4.0
4.0
UNITS
V
V
mA
mA
A
°C
UNITS
nA
V
V
V
pF
ns
R1 (16-September 2016)