CPD82X_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Diode High Current, Low VF Schottky Diode Chip

PROCESS CPD82X
Schottky Diode
High Current, Low VF Schottky Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
14.6 x 14.6 MILS
5.5 MILS
11.8 x 11.8 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
80,282
PRINCIPAL DEVICE TYPES
CMDSH2-3
CMDSH2-4L
CMOSH2-4L
CMUSH2-4L
CMKSH2-4L
CMXSH2-4L
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)