CPD80V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Voltage Switching Diode Chip

PROCESS CPD80V
Switching Diode
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
16 x 16 MILS
7.1 MILS
6.5 x 6.5 MILS
Al - 30,000Å
Au-As - 13,000Å
GEOMETRY
BACKSIDE CATHODE
GROSS DIE PER 5 INCH WAFER
64,704
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
w w w. c e n t r a l s e m i . c o m
R3 (22-March 2010)