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| CPD80V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Voltage Switching Diode Chip | |||
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CentralTM
Semiconductor Corp.
PROCESS CPD80V
Switching Diode
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
16 x 16 MILS
7.1 MILS
6.5 x 6.5 MILS
Al - 30,000Ã
Au.As - 13,000Ã
GEOMETRY
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
45,050
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
R0 (17-August 2004)
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