CPD80 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switch Diode High Voltage Switching Diode Chip

Central^TM
Semiconductor Corp.
PROCESS CPD80
Switch Diode
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
16 x 16 MILS
9.0 MILS
6.5 x 6.5 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
45,050
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (22-October 2003)