CPD77 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Schottky Rectifier 3.0A Schottky Barrier Rectifier Chip

PROCESS CPD77
Schottky Rectifier
3.0A Schottky Barrier Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
61 x 61 MILS
9.8 MILS
55 x 55 MILS
Ti/Ag - (2,500Å/30,000Å)
Ti/Ni/Au - (1,600Å/5,550Å/1,500Å)
GROSS DIE PER 4 INCH WAFER
3,118
PRINCIPAL DEVICE TYPES
CTLSH3-30M833
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (02 -March 2006)