CPD76X-1N5817 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – Schottky Rectifier Die 1.0 Amp, 20 Volt

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CPD76X-1N5817
Schottky Rectifier Die
1.0 Amp, 20 Volt
The CPD76X-1N5817 is a silicon 1.0 Amp, 20 Volt Schottky rectifier ideal for all types of
commercial, industrial, entertainment, and computer applications.
ANODE
BACKSIDE CATHODE
MECHANICAL SPECIFICATIONS:
Die Size
32 x 32 MILS
Die Thickness
5.9 MILS
Anode Bonding Pad Size 27 x 27 MILS
Top Side Metalization
Al – 20,000Å
Back Side Metalization
Au – 9,000Å
Scribe Alley Width
2.36 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
16,276
R1
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=100°C)
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
TJ, Tstg
20
20
14
1.0
25
-65 to +150
UNITS
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise)
SYMBOL TEST CONDITIONS
MIN
IR
VR=20V
VF
IF=0.1A
VF
IF=1.0A
VF
IF=3.1A
CJ
VR=0, f=1.0MHz
MAX
1.0
320
450
750
300
UNITS
mA
mV
mV
mV
pF
R1 (14-September 2016)