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CPD76V Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Schottky Diode 1.0A Schottky Diode Chip
PROCESS CPD76V
Schottky Diode
1.0A Schottky Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
32 x 32 MILS
7.1 MILS
26 x 26 MILS
Al - 20,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
10,915
PRINCIPAL DEVICE TYPES
CMLSH1-40
1N5817
1N5818
1N5819
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R0 (8 -April 2005)