CPD73_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Bridge Rectifier Monolithic Quad Diode Bridge Chip

PROCESS CPD73
Bridge Rectifier
Monolithic Quad Diode Bridge Chip
PROCESS DETAILS
Die Size
Die Thickness
Bonding Pad Area 1 (+DC)
Bonding Pad Area 2 (AC)
Bonding Pad Area 3 (-DC)
Bonding Pad Area 4 (AC)
Top Side Metalization
Back Side Metalization
GEOMETRY
25 x 25 MILS
6.0 MILS
3.0 x 3.0 MILS
3.0 x 7.0 MILS
3.0 x 4.0 MILS
3.0 x 7.0 MILS
Al - 12,000Å
Au - 5,000Å
GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)