CPD65 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Low Leakage Diode Picoampere Diode Chip

PROCESS CPD65
Low Leakage Diode
Picoampere Diode Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
9.5 X 9.5 MILS
7.5 MILS
2.5 MILS DIAMETER
Al - 30,000Å
Au - 13,000Å
GROSS DIE PER 4 INCH WAFER
125,200
PRINCIPAL DEVICE TYPES
BAV45
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)