CPD65-BAV45 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications.

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CPD65-BAV45
Low Leakage Diode Die
50mA, 35 Volt
The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications.
A
BACKSIDE CATHODE
MECHANICAL SPECIFICATIONS:
Die Size
11.8 x 11.8 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Size 2.35 MILS DIAMETER
Top Side Metalization
Al – 15,000Å
Back Side Metalization
Au – 18,000Å
Scribe Alley Width
2.5 MILS
Wafer Diameter
4 INCHES
Gross Die Per Wafer
75,000
R0
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Operating and Storage Junction Temperature
SYMBOL
VRRM
VR
IF
IFRM
TJ, Tstg
35
20
50
100
-65 to +125
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=5.0V
IR
VR=20V
VF
IF=10mA
CJ
VR=0, f=1.0MHz
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
MAX
5.0
10
1.0
1.3
600
UNITS
V
V
mA
mA
°C
UNITS
pA
pA
V
pF
ns
R0 (8-September 2016)