CPD63 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Speed Switching Diode Chip

PROCESS CPD63
Switching Diode
High Speed Switching Diode Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
11 x 11 MILS
11 MILS
3.3 x 3.3 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
94,130
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
R2 (1-August 2002)