CPD48V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Diode High Current Schottky Diode Chip

PROCESS CPD48V
Schottky Diode
High Current Schottky Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
13.8 x 13.8 MILS
7.1 MILS
9.0 x 9.0 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
89,720
PRINCIPAL DEVICE TYPES
CMPSH-3 Series
CMSSH-3 Series
CMXSH-3
CMKSH-3T
BACKSIDE CATHODE
w w w. c e n t r a l s e m i . c o m
R3 (22-March 2010)