CPD48 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Diode High Current Schottky Diode Chip

PROCESS CPD48
Schottky Diode
High Current Schottky Diode Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
14 x 14 MILS
9.0 MILS
9.0 x 9.0 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
62,250
PRINCIPAL DEVICE TYPES
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (1-August 2002)