CPD41_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Current Switching Diode Chip

PROCESS CPD41
Switching Diode
High Current Switching Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
19.7 x 19.7 MILS
8.0 MILS
6.5 x 6.5 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
30,394
PRINCIPAL DEVICE TYPES
1N3600
1N4150
CMPD4150
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)