CPD41 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Switching Diode High Current Switching Diode Chip

PROCESS CPD41
Switching Diode
High Current Switching Diode Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
20 x 20 MILS
8.0 MILS
6.5 x 6.5 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
29,250
PRINCIPAL DEVICE TYPES
1N3600
1N4150
CMPD4150
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (1-August 2002)