CPD32X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Rectifier Die 10 Amp, 40 Volt

w w w. c e n t r a l s e m i . c o m
CPD32X
Schottky Rectifier Die
10 Amp, 40 Volt
The CPD32X Schottky die is optimized for alternative energy applications. The 6 mil thick die
provides an ultra low profile that is readily attached via standard die attach methods.
Parametrically, the device is extremely energy efficient as a result of low forward and reverse
conduction losses.
FEATURES:
• Low forward voltage at 10 Amps forward current
• Low reverse leakage current
• Low profile geometry
• Metalization suitable for standard die attach technologies
• Top metalization optimized for wire bonding
APPLICATIONS:
The CPD32X is optimized for use as a by-pass rectifier in low profile solar (PV) panels.
MECHANICAL SPECIFICATIONS:
Die Size
85 x 85 MILS
Die Thickness
5.9 MILS ± 0.8 MILS
Die Passivation
SiN
Anode Bonding Pad Area 75 x 75 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Ti/Ni/Au – 1,600Å/5,550Å/1,500Å
Scribe Alley Width
3.15 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
2,260
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak Forward Surge Current (tp=8.3ms)
Operating and Storage Junction Temperature
SYMBOL
VRRM
VR
IO
IFSM
TJ, Tstg
40
40
10
250
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=10V
10
200
IR
VR=40V
30
500
IR
VR=40V, TA=100°C
15
50
BVR
IR=0.5mA
40
VF
IF=5.0A
0.43
0.48
VF
IF=10A
0.48
0.52
UNITS
V
V
A
A
°C
UNITS
μA
μA
mA
V
V
V
PACKING OPTIONS:
• CPD32X-WN: Full Wafer
w w w. c e n t r a l s e m i . c o m
• CPD32X-WR: Sawn Wafer on Plastic Ring
R3 (2-December 2011)