CPD30V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Dual Switching Diode

PROCESS CPD30V
Dual Switching Diode
Dual, Common Cathode,
High Speed Switching Diode Chip
PROCESS DETAILS
Die Size
Die Thickness
Anode 1 Bonding Pad Area
Anode 2 Bonding Pad Area
Top Side Metalization
Back Side Metalization
15.4 x 15.4 MILS
7.1 MILS
5.9 x 5.9 x 8.3 MILS
5.9 x 5.9 x 8.3 MILS
Al - 30,000Å
Au-As - 10,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
46,200
PRINCIPAL DEVICE TYPE
CMLD2838
BACKSIDE COMMON CATHODE R0
w w w. c e n t r a l s e m i . c o m
R2 (6-October 2011)