CPD25 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip

Central^TM
Semiconductor Corp.
PROCESS CPD25
Fast Recovery Rectifier
3 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GLASS PASSIVATED MESA
87 x 87 MILS
10.6 MILS
69.5 x 69.5 MILS
Au - 5,000Å
Au - 2,000Å
GROSS DIE PER 4 INCH WAFER
1,490
PRINCIPAL DEVICE TYPES
1N5185 thru 1N5188
1N5415 thru 1N5420
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
The Typical Electrical Characteristics data for
this chip is currently being revised.
For the latest updated data
for this Chip Process,
please visit our website at:
www.centralsemi.com/chip
R1 (1-August 2002)