CPD18_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip

PROCESS CPD18
Ultra Fast Rectifier
8 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GLASS PASSIVATED MESA
100 x 100 MILS
14 MILS
78 x 78 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,170
PRINCIPAL DEVICE TYPES
1N5807 thru 1N5811
UES1301 thru UES1306
UES1401 thru UES1403
CUDD8-02 Series
BACKSIDE CATHODE
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)