CPD109R Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Low VF Schottky Diode Chip

PROCESS CPD109R
Schottky Diode
Low VF Schottky Diode Chip
PROCESS DETAILS
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
8.3 x 8.3 MILS
3.9 MILS
5.4 x 5.4 MILS
Al - 20,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
251,364
PRINCIPAL DEVICE TYPE
CFSH01-30L
w w w. c e n t r a l s e m i . c o m
R0 (13-April 2011)