CPD06_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip

PROCESS CPD06
General Purpose Rectifier
3 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GLASS PASSIVATED MESA
89 x 89 MILS
10.2 MILS
66 x 66 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,490
PRINCIPAL DEVICE TYPES
1N5400 thru 1N5408
1N5550 thru 1N5554
1N5624 thru 1N5627
CMR3-02 Series
BACKSIDE CATHODE
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)