CPD06 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip

PROCESS CPD06
General Purpose Rectifier
3 Amp Glass Passivated Rectifier Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GLASS PASSIVATED MESA
87 x 87 MILS
10.4 MILS
69.5 x 69.5 MILS
Au - 5,000Å
Au - 2,000Å
GROSS DIE PER 4 INCH WAFER
1,490
PRINCIPAL DEVICE TYPES
1N5400 thru 1N5408
1N5550 thru 1N5554
1N5624 thru 1N5627
CMR3-02 Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (16- September 2003)