CPD05_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip

PROCESS CPD05
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GLASS PASSIVATED MESA
51 x 51 MILS
10.2 MILS
36 x 36 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,250
PRINCIPAL DEVICE TYPES
1N3611 thru 1N3614
1N4001 thru 1N4007
1N4245 thru 1N4249
1N5059 thru 1N5062
1N5391 thru 1N5399
1N5614 thru 1N5622
CMR1-02 Series
CMR1-02M Series
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)