CPC01 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Silicon Carbide Schottky Rectifier Die 10 Amp, 1200 Volt

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CPC01
Silicon Carbide Schottky Rectifier Die
10 Amp, 1200 Volt
The CPC01 Silicon Carbide Schottky die is optimized for high temperature applications.
Parametrically, the device is energy efficient as a result of low total conduction losses and
minimal changes to switching characteristics as a function of temperature.
FEATURES:
• Positive temperature coefficient
• Low reverse leakage current
• Temperature independent switching characteristics
• High operating junction temperature
• Metalization suitable for standard die attach technologies
• Top metalization optimized for wire bonding
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MECHANICAL SPECIFICATIONS:
Die Size
98 x 98 MILS
Die Thickness
13.8 MILS ± 0.8 MILS
Die Passivation
SiN / SiO2 / PI
Anode Bonding Pad Area 75 x 75 MILS
Top Side Metalization
Al – 40,000Å
Back Side Metalization
Ti/W/Au – 200Å/1,000Å/1,000Å
Wafer Diameter
4 INCHES
Gross Die Per Wafer
1,100
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Peak Forward Surge Current (tp=8.3ms)
Operating and Storage Junction Temperature
SYMBOL
VRRM
VR
IF
IFSM
TJ, Tstg
1200
1200
10
50
-55 to +225
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
MAX
IR
VR=1200V
60
400
IR
VR=1200V, TJ=175°C
0.09
1.0
VF
IF=10A
1.55
1.8
VF
IF=10A, TJ=175°C
2.3
3.0
QC
VR=800V, IF=10A, di/dt=750A/μs
54
CJ
VR=1.0V, f=1.0MHz
477
CJ
VR=300V, f=1.0MHz
50
CJ
VR=600V, f=1.0MHz
41
UNITS
V
V
A
A
°C
UNITS
μA
mA
V
V
nC
pF
pF
pF
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R0 (20-March 2013)