CP788X-2N5087 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.

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CP788X-2N5087
PNP - General Purpose Transistor Die
The CP788X-2N5087 is a silicon PNP transistor designed for general purpose applications.
MECHANICAL SPECIFICATIONS:
Die Size
13.7 x 13.7 MILS
Die Thickness
5.9 MILS
Base Bonding Pad Size
4.0 x 4.0 MILS
Emitter Bonding Pad Size 5.5 x 5.5 MILS
Top Side Metalization
Al-Si – 17,000Å
Back Side Metalization
Au – 9,000Å
Scribe Alley Width
1.8 MILS
Wafer Diameter
5 INCHES
BACKSIDE COLLECTOR R0 Gross Die Per Wafer
91,469
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=35V
IEBO
VEB=3.0V
BVCBO
IC=100μA
BVCEO
IC=1.0mA
VCE(SAT) IC=10mA, IB=1.0mA
VBE(ON)
VCE=5.0V, IC=1.0mA
hFE
VCE=5.0V, IC=100μA
hFE
VCE=5.0V, IC=1.0mA
hFE
VCE=5.0V, IC=10mA
fT
VCE=5.0V, IC=500μA, f=20MHz
Cob
VCB=5.0V, IE=0, f=100kHz
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
MIN
50
50
250
250
250
40
50
50
3.0
50
-65 to +150
MAX
50
50
0.30
0.85
800
4.0
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
MHz
pF
R1 (23-August 2016)