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CP775 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – P-Channel MOSFET Die Enhancement-Mode | |||
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CP775
P-Channel MOSFET Die
Enhancement-Mode
The CP775 medium power P-Channel MOSFET is designed for power management and load
switching applications. The 7.5 mil thick die provides an ultra low proï¬le device that is readily
attached using standard die attach wire bond processes.
APPLICATIONS:
⢠Load switching
⢠Power management
⢠DC-DC conversion
FEATURES:
⢠Low on-resistance, rDS(ON)
⢠Low gate charge, Qgs
⢠High drain current density
MECHANICAL SPECIFICATIONS:
Die Size
90 x 60 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
14.1 x 18.8 MILS
Source Bonding Pad Area 52 x 88 MILS
Top Side Metalization
Al - 40,000Ã
Back Side Metalization
Ti/Ni/Ag - 1,000Ã
/3,000Ã
/10,000Ã
Scribe Alley Width
3.15 MILS
Wafer Diameter
8 INCHES
Gross Die Per Wafer
8,000
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
TJ, Tstg
30
20
11
50
-55 to +150
UNITS
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
1.4
VSD
VGS=0, IS=2.6A
rDS(ON)
VGS=10V, ID=11A
12
rDS(ON)
VGS=4.5V, ID=8.5A
15
Crss
VDS=8.0V, VGS=0, f=1.0MHz
450
Ciss
VDS=8.0V, VGS=0, f=1.0MHz
3100
Coss
VDS=8.0V, VGS=0, f=1.0MHz
320
MAX
100
1.0
3.0
1.3
20
30
UNITS
nA
μA
V
V
V
mΩ
mΩ
pF
pF
pF
R0 (8-August 2013)
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