CP771 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – P-Channel MOSFET Die Enhancement-Mode

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CP771
P-Channel MOSFET Die
Enhancement-Mode
The CP771 medium power P-Channel MOSFET is optimized for power management and drive
circuit applications where energy efficiency is a critical design element. The 7.5 mil thick die
provides an ultra low profile device that is readily attached via wire bond techniques.
Parametrically, low on-resistance and gate charge characteristics maximize efficient operation.
FEATURES:
• Low on-resistance, rDS(ON)
• Low gate charge, Qgs
• High drain current density
• Low profile geometry
• Metalization suitable for standard die attach technologies
• Top metalization optimized for wire bonding
APPLICATIONS:
• Power management
• Motor drives
• Load switching
• DC-DC conversion
MECHANICAL SPECIFICATIONS:
Die Size
55 x 32 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
7.3 x 7.3 MILS
Source Bonding Pad Area 50 x 25 MILS
Top Side Metalization
Al – 40,000Å
Back Side Metalization
Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å
Scribe Alley Width
3.15 MILS
Wafer Diameter
8 INCHES
Gross Die Per Wafer
25,200
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
TJ, Tstg
40
25
6.0
20
-55 to +150
UNITS
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=25V, VDS=0
IDSS
VDS=40V, VGS=0
BVDSS
VGS=0, ID=250μA
40
VGS(th)
VGS=VDS, ID=250μA
1.0
2.0
VSD
VGS=0, IS=2.0A
rDS(ON)
VGS=10V, ID=6.0A
48
rDS(ON)
VGS=4.5V, ID=4.0A
80
MAX
100
UNITS
nA
1.0
μA
V
3.0
V
1.2
V
65
mΩ
95
mΩ
R0 (1-April 2013)