CP764X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESS CP764X
Small Signal MOSFET Transistor
P-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
21.7 x 17.7 MILS
5.5 MILS
4.7 x 4.7 MILS
6.1 x 7.9 MILS
Al-Si - 35,000Å
Au - 12,000Å
GROSS DIE PER 6 INCH WAFER
62,600
PRINCIPAL DEVICE TYPES
CMLDM8002A
CMPDM8002A
CTLDM8002A-M621
w w w. c e n t r a l s e m i . c o m
R1 (22-March 2010)