CP761R Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip

PROCESS CP761R
Small Signal MOSFET
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
14.2 x 14.2 MILS
3.9 MILS
3.94 x 3.94 MILS
3.94 x 7.08 MILS
Al-Si - 35,000Å
Au - 12,000Å
GROSS DIE PER 6 INCH WAFER
123,000
PRINCIPAL DEVICE TYPES
CEDM8001
CMNDM8001
w w w. c e n t r a l s e m i . c o m
R1 (2-September 2010)