CP759R Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip

PROCESS CP759R
Small Signal MOSFET
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
9.1 x 9.1 MILS
3.9 MILS
2.5 MILS DIAMETER
3.9 x 3.9 MILS
Al-Si - 30,000Å
Au - 12,000Å
GROSS DIE PER 6 INCH WAFER
290,000
PRINCIPAL DEVICE TYPE
CMRDM7590
w w w. c e n t r a l s e m i . c o m
R0 (13-May 2010)