CP736V-2N5401 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications.

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CP736V-2N5401
PNP - High Voltage Transistor Die
0.6 Amp, 150 Volt
The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifier
applications.
B
E
MECHANICAL SPECIFICATIONS:
Die Size
17.3 x 17.3 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
3.9 x 3.9 MILS
Emitter Bonding Pad Size 3.9 x 3.9 MILS
Top Side Metalization
Al-Si - 17,000Å
Back Side Metalization
Au - 9,000Å
Scribe Alley Width
1.8 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
57,735
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
160
150
5.0
600
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=120V
IEBO
VEB=3.0V
BVCBO
IC=100µA
160
BVCEO
IC=1.0mA
150
BVEBO
IE=10µA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
50
hFE
VCE=5.0V, IC=10mA
60
hFE
VCE=5.0V, IC=50mA
50
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
40
MAX
50
50
0.2
0.5
1.0
1.0
240
300
6.0
200
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
w w w. c e n t r a l s e m i . c o m
R2 (23-May 2017)