CP726X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip

PROCESS CP726X
Small Signal MOSFET Transistor
P-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
27.6 x 31.5 MILS
5.5 MILS
3.9 x 3.9 MILS
20.2 x 24.1 MILS
Ai-Si - 35,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 6 INCH WAFER
27,700
PRINCIPAL DEVICE TYPES
CMLDM8120
CMPDM8120
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)