CP681 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP - Silicon RF Transistor Die 50mA, 20 Volt

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CP681
PNP - Silicon RF Transistor Die
50mA, 20 Volt
The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifier and mixer
applications.
MECHANICAL SPECIFICATIONS:
Die Size
15 x 15 MILS
Die Thickness
7.9 MILS
Base Bonding Pad Area
2.3 MIL DIAMETER
Emitter Bonding Pad Area 2.3 MIL DIAMETER
Top Side Metalization
Al-Si – 13,000Å
Back Side Metalization
Au – 12,000Å
Scribe Alley Width
3.0 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
74,000
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
20
20
3.0
50
-55 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=10V
IEBO
VEB=2.0V
BVCBO
IC=10μA
20
BVCEO
IC=1.0mA
20
BVEBO
IE=10μA
3.0
VCE(SAT) IC=5.0mA, IB=500μA
VBE(ON)
VCE=10V, IC=5.0mA
hFE
VCE=10V, IC=5.0mA
60
fT
VCE=10V, IC=5.0mA, f=100MHz
600
Ccb
VCB=10V, IE=0, f=1.0MHz
Cce
VCB=10V, IB=0, f=1.0MHz
MAX
100
100
0.5
0.9
0.85
0.65
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
R0 (8-October 2013)