CP645 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistor PNP, 8.0A Power Transistor Chip

PROCESS CP645
Power Transistor
PNP, 8.0A Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
MULTIEPITAXIAL MESA
120 x 145 MILS
13 MILS
20 x 45 MILS
14 x 70 MILS
Al - 50,000Å
Cr / Ni / Ag - 10,000Å
GROSS DIE PER 4 INCH WAFER
640
PRINCIPAL DEVICE TYPES
MJE15031
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (4- April 2005)