CP624 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Programmable Unijunction Transistor

PROCESS CP624
Programmable
Unijunction Transistor
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Cathode Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
PLANAR PASSIVATED
27.5 x 27.5 MILS
11 MILS
7.1 x 5.1 MILS
7.1 x 5.1 MILS
Al - 30,000Å
Au - 13,000Å
GROSS DIE PER 4 INCH WAFER
14,930
PRINCIPAL DEVICE TYPES
2N6028
BACKSIDE GATE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R3 (4- February 2004)