CP611 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor PNP - Amp / Switch Transistor Chip

PROCESS CP611
Power Transistor
PNP - Amp/Switch Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
80 X 99 MILS
12.5 ± 1 MILS
12 X 32 MILS
13 X 46 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
CJD42C
TIP42C
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R3 (21-September 2003)